US Patent 7282768 MOS field-effect transistor
Patent 7282768 was granted and assigned to Seiko Instruments on October, 2007 by the United States Patent and Trademark Office.
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Patent abstract
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a bi-directional diode. The bi-directional diode connects a gate electrode with the semiconductor substrate in the depletion-type MOS field-effect transistor through metal wirings.
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US Patent 07282768 MOS field-effect transistor US Patent 7282768 MOS field-effect transistor
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Patent Number
0728276800
Patent Number
728276800
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072827680
Date of Patent
October 16, 2007
0Patent Application Number
111726960
Date Filed
July 1, 2005
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072827680
Date of Patent
October 16, 2007
0Patent Application Number
111726960
Date Filed
July 1, 2005
0Official Website
Patent Primary Examiner
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US Patent 07282768 MOS field-effect transistor
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07282768
Date of patent
October 16, 2007
Patent application number
11172696
Date Filed
July 1, 2005
Patent primary examiner
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