Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yumiko Hirano0
Date of Patent
November 6, 2007
Patent Application Number
11206855
Date Filed
August 19, 2005
Patent Primary Examiner
Patent abstract
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1.27×1018 to 3.0×1018 atoms/cm3 is heat-treated in a reducing-gas or inert-gas atmosphere, by increasing the temperature at the rate of 0.5° C./min to 2.0° C./min until the wafer is heated to a heat-treatment temperature of 1000 to 1200° C.
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