US Patent 7291220 Process of producing silicon wafer
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Patent Inventor Names
Yumiko Hirano0
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Patent abstract
A silicon wafer made by the Czochralski method, including a ring-shaped OSF region and having nitrogen concentration ranging from 2.9×1014 to 5.0×1015 atoms/cm3 and oxygen concentration of 1.27×1018 to 3.0×1018 atoms/cm3 is heat-treated in a reducing-gas or inert-gas atmosphere, by increasing the temperature at the rate of 0.5° C./min to 2.0° C./min until the wafer is heated to a heat-treatment temperature of 1000 to 1200° C.
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US Patent 07291220 Process of producing silicon wafer US Patent 7291220 Process of producing silicon wafer
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Patent Number
07291220
Patent Number
7291220
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US Patent 07291220 Process of producing silicon wafer
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Is a
Patent jurisdiction
Patent number
07291220
Date of patent
November 6, 2007
Patent application number
11206855
Date Filed
August 19, 2005
Patent primary examiner
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