US Patent 7291508 Laser probe points

Patent 7291508 was granted and assigned to Intel on November, 2007 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

72915080

Patent Inventor Names

Mel A. Ortega0

Date of Patent

November 6, 2007

Patent Application Number

104036200

Date Filed

March 31, 2003

Patent Primary Examiner

‌

Carl Whitehead, Jr.

Patent abstract

A P-type diffusion diode is used as a probe point for an infrared laser probing system. The P-type diffusion diode probe point may be formed on a semiconductor substrate and connected to an integrated circuit thereon. The P-type diffusion diode probe point may result in higher signal-to-noise ratios in testing of integrated circuits at lower voltages.

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