US Patent 7291508 Laser probe points
Patent 7291508 was granted and assigned to Intel on November, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Mel A. Ortega0
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Patent abstract
A P-type diffusion diode is used as a probe point for an infrared laser probing system. The P-type diffusion diode probe point may be formed on a semiconductor substrate and connected to an integrated circuit thereon. The P-type diffusion diode probe point may result in higher signal-to-noise ratios in testing of integrated circuits at lower voltages.
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US Patent 07291508 Laser probe points US Patent 7291508 Laser probe points
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Patent Number
072915080
Patent Number
72915080
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Patent Jurisdiction
Patent Number
072915080
Date of Patent
November 6, 2007
0Patent Application Number
104036200
Date Filed
March 31, 2003
0Official Website
Patent Primary Examiner
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US Patent 07291508 Laser probe points
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07291508
Date of patent
November 6, 2007
Patent application number
10403620
Date Filed
March 31, 2003
Patent primary examiner
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