US Patent 7297630 Methods of fabricating via hole and trench
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Patent Inventor Names
Jung Joo Kim0
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Patent abstract
A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; performing a thermal treatment of the substrate to getter oxygen and forming a barrier layer; and filling copper into the via hole and the trench.
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US Patent 07297630 Methods of fabricating via hole and trench US Patent 7297630 Methods of fabricating via hole and trench
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Patent Number
072976300
Patent Number
72976300
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Patent Jurisdiction
Patent Number
072976300
Date of Patent
November 20, 2007
0Patent Application Number
110274350
Date Filed
December 30, 2004
0Official Website
Patent Primary Examiner
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US Patent 07297630 Methods of fabricating via hole and trench
Infobox
Is a
Patent jurisdiction
Patent number
07297630
Date of patent
November 20, 2007
Patent application number
11027435
Date Filed
December 30, 2004
Patent primary examiner
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