US Patent 7300880 Methods for forming fine photoresist patterns
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Patent Inventor Names
Jae Chang Jung0
Young Sun Hwang0
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Patent abstract
A method of forming a fine pattern by a tri-layer resist process to overcome a bi-layer resist process is disclosed. When a fine pattern is formed using a silicon photoresist, a gas protection film is coated on a photoresist to prevent exhaustion of silicon gas generated from the photoresist in light examination of high energy. As a result, lens of exposure equipment may be prevented from being contaminated.
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US Patent 07300880 Methods for forming fine photoresist patterns US Patent 7300880 Methods for forming fine photoresist patterns
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Patent Number
073008800
Patent Number
73008800
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Patent Jurisdiction
Patent Number
073008800
Date of Patent
November 27, 2007
0Patent Application Number
107190830
Date Filed
November 21, 2003
0Official Website
Patent Primary Examiner
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US Patent 07300880 Methods for forming fine photoresist patterns
Infobox
Is a
Patent jurisdiction
Patent number
07300880
Date of patent
November 27, 2007
Patent application number
10719083
Date Filed
November 21, 2003
Patent primary examiner
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