A magnetoresistive sensor having an in stack bias layer extending beyond the track width of the sensor for improved free layer stability and resistance against amplitude flipping.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 7301735 Higher flip threshold structure for in-stack bias layer

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API

US Patent 7301735 Higher flip threshold structure for in-stack bias layer

Contents

Patent attributes

Timeline

Further Resources

References

Find more entities like US Patent 7301735 Higher flip threshold structure for in-stack bias layer