US Patent 7301735 Higher flip threshold structure for in-stack bias layer
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Patent Inventor Names
Hardayal Singh Gill0
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Patent abstract
A magnetoresistive sensor having an in stack bias layer extending beyond the track width of the sensor for improved free layer stability and resistance against amplitude flipping.
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US Patent 07301735 Higher flip threshold structure for in-stack bias layer US Patent 7301735 Higher flip threshold structure for in-stack bias layer
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Patent Number
073017350
Patent Number
73017350
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Patent Jurisdiction
Patent Number
073017350
Date of Patent
November 27, 2007
0Patent Application Number
108004650
Date Filed
March 15, 2004
0Official Website
Patent Primary Examiner
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US Patent 07301735 Higher flip threshold structure for in-stack bias layer
Infobox
Is a
Patent jurisdiction
Patent number
07301735
Date of patent
November 27, 2007
Patent application number
10800465
Date Filed
March 15, 2004
Patent primary examiner
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