Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 25, 2007
Patent Application Number
11024795
Date Filed
December 30, 2004
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method of forming a barrier metal in a semiconductor device. The present invention includes forming an insulating layer on a substrate having a lower metal line formed thereon, forming an opening exposing the lower metal line through the insulating layer, and forming a barrier metal layer on a sidewall of the opening and the insulating layer except the lower metal line by applying a positive voltage to the substrate.
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