Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hyunbae Lee0
Geunwoo Kim0
Yoon Tae Hwang0
Wandon Kim0
Date of Patent
November 28, 2023
0Patent Application Number
175789820
Date Filed
January 19, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern and extending in a first direction; a source/drain pattern on the active pattern and adjacent to a side of the gate electrode; and an active contact in a contact hole on the source/drain pattern, wherein the active contact includes a first contact in a lower region of the contact hole, the first contact including a barrier pattern and a conductive pattern; a diffusion barrier layer on the first contact; and a second contact on the diffusion barrier layer, and a top surface of the diffusion barrier layer is coplanar with a top surface of the barrier pattern of the first contact.
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