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US Patent 11830874 Method of fabricating a semiconductor device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
January 19, 2022
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Date of Patent
November 28, 2023
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Patent Application Number
17578982
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Patent Citations
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US Patent 7335590 Method of fabricating semiconductor device by forming diffusion barrier layer selectively and semiconductor device fabricated thereby
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US Patent 7374584 Interconnects forming method and interconnects forming apparatus
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US Patent 10283404 Selective deposition of WCN barrier/adhesion layer for interconnect
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US Patent 7544601 Semiconductor device and a method for manufacturing the same
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US Patent 10438891 Integrated circuit device
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US Patent 6905964 Method of fabricating self-aligned metal barriers by atomic layer deposition on the copper layer
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US Patent 7312147 Method of forming barrier metal in semiconductor device
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Patent Inventor Names
Hyunbae Lee
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Geunwoo Kim
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Yoon Tae Hwang
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Wandon Kim
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11830874
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Patent Primary Examiner
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Wasiul Haider
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CPC Code
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H01L 21/76897
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H01L 21/76847
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H01L 27/088
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H01L 29/0847
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H01L 29/42392
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H01L 29/78696
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H01L 29/41791
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H01L 29/78
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H01L 29/4941
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H01L 21/76844
0
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