US Patent 7317188 TEM sample preparation from a circuit layer structure
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Patent Inventor Names
Wen Yi Zhang0
Weng Yee Kwong0
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Patent abstract
A method of TEM sample preparation from a circuit layer structure, the method comprising electron-beam assisted deposition of a first protective layer over a site of interest of the circuit layer structure; ion-beam assisted deposition of a second protective layer over the first protective layer; and ion-beam milling at the site of interest through the first and second protective layers.
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US Patent 07317188 TEM sample preparation from a circuit layer structure US Patent 7317188 TEM sample preparation from a circuit layer structure
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Patent Number
073171880
Patent Number
73171880
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Patent Jurisdiction
Patent Number
073171880
Date of Patent
January 8, 2008
0Patent Application Number
111154100
Date Filed
April 27, 2005
0Official Website
Patent Primary Examiner
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US Patent 07317188 TEM sample preparation from a circuit layer structure
Infobox
Is a
Patent jurisdiction
Patent number
07317188
Date of patent
January 8, 2008
Patent application number
11115410
Date Filed
April 27, 2005
Patent primary examiner
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