US Patent 7318870 Method of cleaning semiconductor substrate
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Patent abstract
A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O3) into the cleaning chamber. This process operates to cleanse the semiconductor substrate without corrosion or etching of the semiconductor substrate; even when the substrate has metal layer made of tungsten.
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US Patent 07318870 Method of cleaning semiconductor substrate US Patent 7318870 Method of cleaning semiconductor substrate
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Patent Number
0731887000
Patent Number
731887000
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Official Website
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Infobox
Is a
Patent Jurisdiction
Patent Number
073188700
Date of Patent
January 15, 2008
0Patent Application Number
104217400
Date Filed
April 24, 2003
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
073188700
Date of Patent
January 15, 2008
0Patent Application Number
104217400
Date Filed
April 24, 2003
0Official Website
Patent Primary Examiner
Edits on 17 Jun, 2022
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US Patent 07318870 Method of cleaning semiconductor substrate
Infobox
Is a
Patent jurisdiction
Patent number
07318870
Date of patent
January 15, 2008
Patent application number
10421740
Date Filed
April 24, 2003
Patent primary examiner
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