Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Michinori Wachi0
Shinji Yabuki0
Kouji Daihou0
Date of Patent
January 15, 2008
0Patent Application Number
113418470
Date Filed
January 30, 2006
0Patent Primary Examiner
Patent abstract
A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less.
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