US Patent 7318916 Semiconductive GaAs wafer and method of making the same
All edits
Edits on 16 Sep, 2023
Golden AI
Edits made to:
Infobox (+3 properties)
Infobox
Patent Inventor Names
Kouji Daihou0
Michinori Wachi0
Shinji Yabuki0
Edits on 1 Sep, 2023
Golden AI
Edits made to:
Article (+458 characters)
Article
Patent abstract
A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less.
Edits on 23 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07318916 Semiconductive GaAs wafer and method of making the same US Patent 7318916 Semiconductive GaAs wafer and method of making the same
Infobox
Patent Number
073189160
Patent Number
73189160
Edits on 18 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
073189160
Date of Patent
January 15, 2008
0Patent Application Number
113418470
Date Filed
January 30, 2006
0Official Website
Patent Primary Examiner
Edits on 17 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 23 Nov, 2021
Golden AI
Edits made to:
Infobox (+7 properties)
US Patent 07318916 Semiconductive GaAs wafer and method of making the same
Infobox
Is a
Patent jurisdiction
Patent number
07318916
Date of patent
January 15, 2008
Patent application number
11341847
Date Filed
January 30, 2006
Patent primary examiner
Find more entities like US Patent 7318916 Semiconductive GaAs wafer and method of making the same
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
