US Patent 7319068 Method of depositing low k barrier layers
Patent 7319068 was granted and assigned to Applied Materials on January, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Li-Qun Xia0
Louis Yang0
Ping Xu0
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Patent abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.
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US Patent 07319068 Method of depositing low k barrier layers US Patent 7319068 Method of depositing low k barrier layers
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Patent Number
073190680
Patent Number
73190680
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Current Assignee
Patent Jurisdiction
Patent Number
073190680
Date of Patent
January 15, 2008
0Patent Application Number
115379280
Date Filed
October 2, 2006
0Official Website
Patent Primary Examiner
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US Patent 07319068 Method of depositing low k barrier layers
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07319068
Date of patent
January 15, 2008
Patent application number
11537928
Date Filed
October 2, 2006
Patent primary examiner
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