Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tong Zhao0
Yun-Fei Li0
Chyu-Jiuh Torng0
Hui-Chuan Wang0
Date of Patent
January 22, 2008
0Patent Application Number
108464060
Date Filed
May 14, 2004
0Patent Primary Examiner
Patent abstract
In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
