US Patent 7320169 Self-pinned GMR structure by annealing
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Chyu-Jiuh Torng0
Hui-Chuan Wang0
Tong Zhao0
Yun-Fei Li0
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Patent abstract
In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
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US Patent 07320169 Self-pinned GMR structure by annealing US Patent 7320169 Self-pinned GMR structure by annealing
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Patent Number
073201690
Patent Number
73201690
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Patent Number
073201690
Date of Patent
January 22, 2008
0Patent Application Number
108464060
Date Filed
May 14, 2004
0Official Website
Patent Primary Examiner
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US Patent 07320169 Self-pinned GMR structure by annealing
Infobox
Is a
Patent jurisdiction
Patent number
07320169
Date of patent
January 22, 2008
Patent application number
10846406
Date Filed
May 14, 2004
Patent primary examiner
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