Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 29, 2008
Patent Application Number
10999271
Date Filed
November 29, 2004
Patent Primary Examiner
Patent abstract
The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode layer (220) over a gate dielectric layer (210) located on a substrate (110), and patterning the gate electrode layer (220) using a combination of a dry etch process (410) and a wet etch process (510).
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
