US Patent 7323403 Multi-step process for patterning a metal gate electrode
Patent 7323403 was granted and assigned to Texas Instruments on January, 2008 by the United States Patent and Trademark Office.
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Patent abstract
The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode layer (220) over a gate dielectric layer (210) located on a substrate (110), and patterning the gate electrode layer (220) using a combination of a dry etch process (410) and a wet etch process (510).
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US Patent 07323403 Multi-step process for patterning a metal gate electrode US Patent 7323403 Multi-step process for patterning a metal gate electrode
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Patent Number
0732340300
Patent Number
732340300
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073234030
Date of Patent
January 29, 2008
0Patent Application Number
109992710
Date Filed
November 29, 2004
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073234030
Date of Patent
January 29, 2008
0Patent Application Number
109992710
Date Filed
November 29, 2004
0Official Website
Patent Primary Examiner
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US Patent 07323403 Multi-step process for patterning a metal gate electrode
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07323403
Date of patent
January 29, 2008
Patent application number
10999271
Date Filed
November 29, 2004
Patent primary examiner
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