Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naohito Yamada0
Toru Hayase0
Yoshimasa Kobayashi0
Date of Patent
February 19, 2008
0Patent Application Number
111721080
Date Filed
June 30, 2005
0Patent Primary Examiner
Patent abstract
A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating, heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride, and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.
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