US Patent 7332027 Method for manufacturing aluminum nitride single crystal

Patent 7332027 was granted and assigned to NGK Insulators on February, 2008 by the United States Patent and Trademark Office.

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Patent Inventor Names

Naohito Yamada0

Toru Hayase0

Yoshimasa Kobayashi0

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Patent abstract

A method for manufacturing an aluminum nitride single crystal is provided, including the steps of preparing a raw material composition containing aluminum oxide and/or an aluminum oxide precursor which is converted into aluminum oxide by heating, and aluminum nitride and/or an aluminum nitride precursor which is converted into aluminum nitride by heating, heating the raw material composition at 1600 to 2400° C. to synthesize aluminum nitride, and causing crystal growth of the aluminum nitride to obtain an aluminum nitride single crystal.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=073320270

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