Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 26, 2008
Patent Application Number
11487669
Date Filed
July 17, 2006
Patent Primary Examiner
Patent abstract
A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
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