Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 26, 2008
Patent Application Number
11155151
Date Filed
June 17, 2005
Patent Primary Examiner
Patent abstract
A silicide 160 is formed in exposed silicon on a semiconductor wafer 10 by a method that includes forming a thin interface layer 140 over the semiconductor wafer 10 and performing a first low temperature anneal to create the silicide 160. The method further includes removing an unreacted portion of the interface layer 140 and performing a second low temperature anneal to complete the formation of a low resistance silicide 160.
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