US Patent 7335595 Silicide formation using a low temperature anneal process
Patent 7335595 was granted and assigned to Texas Instruments on February, 2008 by the United States Patent and Trademark Office.
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Patent abstract
A silicide 160 is formed in exposed silicon on a semiconductor wafer 10 by a method that includes forming a thin interface layer 140 over the semiconductor wafer 10 and performing a first low temperature anneal to create the silicide 160. The method further includes removing an unreacted portion of the interface layer 140 and performing a second low temperature anneal to complete the formation of a low resistance silicide 160.
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US Patent 07335595 Silicide formation using a low temperature anneal process US Patent 7335595 Silicide formation using a low temperature anneal process
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Patent Number
0733559500
Patent Number
733559500
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073355950
Date of Patent
February 26, 2008
0Patent Application Number
111551510
Date Filed
June 17, 2005
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073355950
Date of Patent
February 26, 2008
0Patent Application Number
111551510
Date Filed
June 17, 2005
0Official Website
Patent Primary Examiner
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US Patent 07335595 Silicide formation using a low temperature anneal process
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07335595
Date of patent
February 26, 2008
Patent application number
11155151
Date Filed
June 17, 2005
Patent primary examiner
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