US Patent 7348268 Controlled breakdown phase change memory device

Patent 7348268 was granted and assigned to Intel on March, 2008 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Intel

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

73482680

Patent Inventor Names

Charles H. Dennison0

Date of Patent

March 25, 2008

Patent Application Number

109392370

Date Filed

September 10, 2004

Patent Primary Examiner

‌

Zandra V. Smith

Patent abstract

A phase change memory material may be deposited over an electrode in a pore through an insulator. The adherence of the memory material to the insulator may be improved by using a glue layer. At the same time, a breakdown layer may be formed in the pore between the memory material and electrode.

Timeline

No Timeline data yet.

Further Resources

Title

Author

Link

Type

Date

No Further Resources data yet.

References

Find more entities like US Patent 7348268 Controlled breakdown phase change memory device

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API