US Patent 7348268 Controlled breakdown phase change memory device
Patent 7348268 was granted and assigned to Intel on March, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Charles H. Dennison0
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Patent abstract
A phase change memory material may be deposited over an electrode in a pore through an insulator. The adherence of the memory material to the insulator may be improved by using a glue layer. At the same time, a breakdown layer may be formed in the pore between the memory material and electrode.
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US Patent 07348268 Controlled breakdown phase change memory device US Patent 7348268 Controlled breakdown phase change memory device
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Patent Number
073482680
Patent Number
73482680
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Current Assignee
Patent Jurisdiction
Patent Number
073482680
Date of Patent
March 25, 2008
0Patent Application Number
109392370
Date Filed
September 10, 2004
0Official Website
Patent Primary Examiner
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US Patent 07348268 Controlled breakdown phase change memory device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07348268
Date of patent
March 25, 2008
Patent application number
10939237
Date Filed
September 10, 2004
Patent primary examiner
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