Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 6, 2008
Patent Application Number
10516742
Date Filed
August 19, 2003
Patent Primary Examiner
Patent abstract
The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in any one of a group of three-layered structure AlyInxGa1−(x+y)N/InxGa1−xN/GaN where 0≦x≦1 and 0≦y≦1, two-layered structure InxGa1−xN/GaN where 0≦x≦1 and superlattice structure of InxGa1−xN/GaN where 0≦x≦1; and a GaN-based single crystalline layer.
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