US Patent 7368309 Nitride semiconductor and fabrication method thereof

The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in any one of a group of three-layered structure AlyInxGa1−(x+y)N/InxGa1−xN/GaN where 0≦x≦1 and 0≦y≦1, two-layered structure InxGa1−xN/GaN where 0≦x≦1 and superlattice structure of InxGa1−xN/GaN where 0≦x≦1; and a GaN-based single crystalline layer.