Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Krishnaswamy Ramkumar0
Sundar Narayanan0
Date of Patent
May 13, 2008
0Patent Application Number
109503320
Date Filed
September 24, 2004
0Patent Primary Examiner
Patent abstract
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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