US Patent 7371637 Oxide-nitride stack gate dielectric
Patent 7371637 was granted and assigned to Cypress Semiconductor Corporation on May, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Krishnaswamy Ramkumar0
Sundar Narayanan0
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Patent abstract
A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
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US Patent 07371637 Oxide-nitride stack gate dielectric US Patent 7371637 Oxide-nitride stack gate dielectric
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Patent Number
073716370
Patent Number
73716370
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0
Patent Jurisdiction
Patent Number
073716370
Date of Patent
May 13, 2008
0Patent Application Number
109503320
Date Filed
September 24, 2004
0Official Website
Patent Primary Examiner
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US Patent 07371637 Oxide-nitride stack gate dielectric
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Is a
Current assignee
Patent jurisdiction
Patent number
07371637
Date of patent
May 13, 2008
Patent application number
10950332
Date Filed
September 24, 2004
Patent primary examiner
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