US Patent 7384852 Sub-lithographic gate length transistor using self-assembling polymers
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Patent Inventor Names
Haining Yang0
Wai-Kin Li0
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Patent abstract
A semiconductor structure including at least one transistor located on a surface of a semiconductor substrate, wherein the at least one transistor has a sub-lithographic channel length, is provided. Also provided is a method to form such a semiconductor structure using self-assembling block copolymer that can be placed at a specific location using a pre-fabricated hard mask pattern.
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US Patent 07384852 Sub-lithographic gate length transistor using self-assembling polymers US Patent 7384852 Sub-lithographic gate length transistor using self-assembling polymers
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Patent Number
073848520
Patent Number
73848520
Edits on 6 Apr, 2023
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Patent Jurisdiction
Patent Number
073848520
Date of Patent
June 10, 2008
0Patent Application Number
115526410
Date Filed
October 25, 2006
0Official Website
Patent Primary Examiner
Edits on 9 Jun, 2022
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US Patent 07384852 Sub-lithographic gate length transistor using self-assembling polymers
Infobox
Is a
Patent jurisdiction
Patent number
07384852
Date of patent
June 10, 2008
Patent application number
11552641
Date Filed
October 25, 2006
Patent primary examiner
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