Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
June 10, 2008
Patent Application Number
11449940
Date Filed
June 9, 2006
Patent Primary Examiner
Patent abstract
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a bottom insulation thicker than the first thickness.
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