US Patent 7385273 Power semiconductor device
Patent 7385273 was granted and assigned to International Rectifier (company) on June, 2008 by the United States Patent and Trademark Office.
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Patent abstract
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation body surrounding the active region and having a recess that includes a bottom insulation thicker than the first thickness.
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US Patent 07385273 Power semiconductor device US Patent 7385273 Power semiconductor device
Infobox
Patent Number
0738527300
Patent Number
738527300
Edits on 26 Mar, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073852730
Date of Patent
June 10, 2008
0Patent Application Number
114499400
Date Filed
June 9, 2006
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
073852730
Date of Patent
June 10, 2008
0Patent Application Number
114499400
Date Filed
June 9, 2006
0Official Website
Patent Primary Examiner
Edits on 9 Jun, 2022
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US Patent 07385273 Power semiconductor device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07385273
Date of patent
June 10, 2008
Patent application number
11449940
Date Filed
June 9, 2006
Patent primary examiner
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