Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 1, 2008
Patent Application Number
11569280
Date Filed
May 19, 2005
Patent Primary Examiner
Patent abstract
The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a≧0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a≧O).
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