US Patent 7393213 Method for material growth of GaN-based nitride layer
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Patent abstract
The present invention relates to a method for forming a GaN-based nitride layer comprising a first step of forming a first layer comprising SiaCbNc (c,fc>0, a≧0) on a sapphire substrate and a second step for forming a nitride layer comprising a GaN component on the first layer comprising SiaCbNc (c,b>0, a≧O).
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US Patent 07393213 Method for material growth of GaN-based nitride layer US Patent 7393213 Method for material growth of GaN-based nitride layer
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Patent Number
0739321300
Patent Number
739321300
Edits on 28 Apr, 2023
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Patent Jurisdiction
Patent Number
073932130
Date of Patent
July 1, 2008
0Patent Application Number
115692800
Date Filed
May 19, 2005
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
073932130
Date of Patent
July 1, 2008
0Patent Application Number
115692800
Date Filed
May 19, 2005
0Official Website
Patent Primary Examiner
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US Patent 07393213 Method for material growth of GaN-based nitride layer
Infobox
Is a
Patent jurisdiction
Patent number
07393213
Date of patent
July 1, 2008
Patent application number
11569280
Date Filed
May 19, 2005
Patent primary examiner
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