Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
July 22, 2008
Patent Application Number
11602032
Date Filed
November 20, 2006
Patent Primary Examiner
Patent abstract
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a charge storage layer, a tunneling insulating layer, a blocking insulating layer and a gate electrode layer are not attacked from etching in a process for forming the gate electrode, thereby forming a nonvolatile memory device having good reliability.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
