US Patent 7402493 Method for forming non-volatile memory devices
Patent 7402493 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on July, 2008 by the United States Patent and Trademark Office.
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Patent abstract
According to a nonvolatile memory device having a multi gate structure and a method for forming the same of the present invention, a gate electrode is formed using a damascene process. Therefore, a charge storage layer, a tunneling insulating layer, a blocking insulating layer and a gate electrode layer are not attacked from etching in a process for forming the gate electrode, thereby forming a nonvolatile memory device having good reliability.
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US Patent 07402493 Method for forming non-volatile memory devices US Patent 7402493 Method for forming non-volatile memory devices
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Patent Number
0740249300
Patent Number
740249300
Edits on 2 Apr, 2023
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
074024930
Date of Patent
July 22, 2008
0Patent Application Number
116020320
Date Filed
November 20, 2006
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
074024930
Date of Patent
July 22, 2008
0Patent Application Number
116020320
Date Filed
November 20, 2006
0Official Website
Patent Primary Examiner
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US Patent 07402493 Method for forming non-volatile memory devices
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07402493
Date of patent
July 22, 2008
Patent application number
11602032
Date Filed
November 20, 2006
Patent primary examiner
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