US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults

Patent 7404856 was granted and assigned to MEMC Electronic Materials on July, 2008 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

MEMC Electronic Materials

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7404856

Date of Patent

July 29, 2008

Patent Application Number

11623142

Date Filed

January 15, 2007

Patent Primary Examiner

‌

Felisa Hiteshew

Patent abstract

The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.

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