US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Patent 7404856 was granted and assigned to MEMC Electronic Materials on July, 2008 by the United States Patent and Trademark Office.
All edits
Edits on 14 Sep, 2023
Golden AI
Edits made to:
Article (+352 characters)
Article
Patent abstract
The present invention relates to a process for forming single crystal silicon ingots or wafers that contain an axially symmetric region in which vacancies are the predominant intrinsic point defect, that are substantially free of oxidation induced stacking faults, and are nitrogen doped to stabilize oxygen precipitation nuclei therein.
Edits on 18 May, 2023
Golden AI
Edits made to:
Infobox (-1 properties)
Infobox
Official Website
Edits on 17 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 07404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Infobox
Patent Number
0740485600
Patent Number
740485600
Edits on 27 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074048560
Date of Patent
July 29, 2008
0Patent Application Number
116231420
Date Filed
January 15, 2007
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074048560
Date of Patent
July 29, 2008
0Patent Application Number
116231420
Date Filed
January 15, 2007
0Official Website
Patent Primary Examiner
Edits on 9 Jun, 2022
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Website URL
Edits on 30 Nov, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 07404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07404856
Date of patent
July 29, 2008
Patent application number
11623142
Date Filed
January 15, 2007
Patent primary examiner
Find more entities like US Patent 7404856 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
