Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshitaka Nakamura0
Ryoichi Nakamura0
Satoru Yamada0
Shigetomi Michimata0
Ryo Nagai0
Date of Patent
August 19, 2008
Patent Application Number
11099511
Date Filed
April 6, 2005
Patent Primary Examiner
Patent abstract
A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.
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