US Patent 7414291 Semiconductor device and method of manufacturing the same

A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.