US Patent 7416925 Doped structure for finfet devices
Patent 7416925 was granted and assigned to Advanced Micro Devices on August, 2008 by the United States Patent and Trademark Office.
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A semiconductor device includes a substrate and an insulating layer on the substrate. The semiconductor device also includes a fin structure formed on the insulating layer, where the fin structure includes first and second side surfaces, a dielectric layer formed on the first and second side surfaces of the fin structure, a first gate electrode formed adjacent the dielectric layer on the first side surface of the fin structure, a second gate electrode formed adjacent the dielectric layer on the second side surface of the fin structure, and a doped structure formed on an upper surface of the fin structure in the channel region of the semiconductor device.
US Patent 07416925 Doped structure for finfet devices US Patent 7416925 Doped structure for finfet devices
US Patent 07416925 Doped structure for finfet devices
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