Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Saurabh D. Chowdhury0
Geethakrishnan Narasimhan0
Date of Patent
September 16, 2008
0Patent Application Number
112824220
Date Filed
November 18, 2005
0Patent Primary Examiner
Patent abstract
A method of making a semiconductor structure includes etching an isolation oxide. The isolation oxide is in a substrate, a gate layer is on the substrate, a patterned metallic layer is on the gate layer, and a first patterned etch-stop layer is on the metallic layer.
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