Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 23, 2008
Patent Application Number
11707213
Date Filed
February 13, 2007
Patent Primary Examiner
Patent abstract
A buried bipolar junction is provided in a charge trapping transistor memory device. During a write operation electrons are injected into a surface depletion region of the memory cell transistors. These electrons are accelerated in a vertical electric field and injected over a barrier to a charge trapping dielectric layer of the memory cells.
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