US Patent 7442575 Method of manufacturing semiconductor nanowires

A method is shown for manufacturing silicon semiconductor nanowires on graphite cloth conducting substrates. The nanowires are grown on the substrate by first depositing a thin gold film on the graphite cloth using RF sputtering. The substrate structure is then exposed to dilute silane, resulting in a uniform coating of Si nanowires on the cloth. A method is also shown for growing calcified mineral phases on such nanowire surfaces as well as for the incorporation of anti-osteoporotic drugs or anti-bacterial agents onto the surface of the nanowires. Lastly, a method is shown for promoting the growth of bone-forming cells onto the nanowire materials by exposing specially treated nanowires to bone marrow cells.