Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
October 28, 2008
Patent Application Number
11113332
Date Filed
April 25, 2005
Patent Primary Examiner
Patent abstract
The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.
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