US Patent 7442605 Resistively switching memory

The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.