Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 18, 2008
0Patent Application Number
117544370
Date Filed
May 29, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Disclosed is a phase-change memory device including a phase-change material pattern, a diffusion barrier layer, a bottom electrode and a top electrode. The phase-change material pattern is placed on the bottom electrode, and the diffusion barrier layer containing tellurium is placed on the phase-change material pattern. The top electrode containing titanium is placed on the diffusion barrier layer. The diffusion barrier layer acts to inhibit diffusion of titanium from the top electrode into the phase-change material pattern.
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